Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD

نویسندگان

  • K. J. Willis
  • I. Knezevic
چکیده

The interactions between carriers and fields in semiconductors at low frequencies (<100 GHz) can be adequately described by numerical solution of the Boltzmann transport equation coupled with Poisson’s equation. As the frequency approaches the THz regime, the quasi-static approximation fails and full-wave dynamics must be considered. Here, we review recent advances in global modeling techniques—numerical techniques that couple carrier dynamics with full wave dynamics. We focus on the coupling between the stochastic ensemble Monte Carlo (EMC) simulation of carrier transport and the finite-difference timedomain (FDTD) solution to Maxwell’s curl equations. We discuss the stability and accuracy requirements for different types of high-frequency excitation (wave illumination vs. ac bias), and present simulation results for the THz-regime conductivity of doped bulk silicon, ultrafast carrier dynamics and radiation patterns in GaAs filaments, and the ac response of GaAs MESFETs.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Coupled simulation of carrier transport and electrodynamics: the EMC/FDTD/MD technique

In order to understand the response of conductive materials to high-frequency electrical or optical excitations, the interplay between carrier transport and electrodynamics must be captured. We present our recent work on developing EMC/FDTD/MD, a self-consistent coupled simulation of semiclassical carrier transport, described by ensemble Monte Carlo (EMC), with full-wave electrodynamics, descri...

متن کامل

Multiphysics simulation of high-frequency carrier dynamics in conductive materials

We present a multiphysics numerical technique for the characterization of high-frequency carrier dynamics in high-conductivity materials. The technique combines the ensemble Monte Carlo (EMC) simulation of carrier transport with the finite-difference time-domain (FDTD) solver of Maxwell’s curl equations and the molecular dynamics (MD) technique for short-range Coulomb interactions (electron-ele...

متن کامل

FDTD Analysis of Top-Hat Monopole Antennas Loaded with Radially Layered Dielectric

Top-hat monopole antennas loaded with radially layered dielectric are analyzed using the finite-difference time-domain (FDTD) method. Unlike the mode-matching method (MMM) (which was previously used for analyzing these antennas) the FDTD method enables us to study such structures accurately and easily. Using this method, results can be obtained in a wide frequency band by performing only one ti...

متن کامل

Field Dependent Charge Carrier Transport for Organic Semiconductors at the Time of Flight Configuration

In this paper, we used the time-of-flight (TOF) of a charge packet, that injected by a voltage pulse to calculate the drift velocity and mobility of holes in organic semiconducting polymers. The technique consists in applying a voltage to the anode and calculating the time delay in the appearance of the injected carriers at the other contact. The method is a simple way to determine the charge t...

متن کامل

FDTD Modeling of Heatsink RF Characteristics for EMC Mitigation

Due to their size and complex geometry, large heatsinks such as those used in the power electronics industry may enhance the radiated emissions produced by the circuits employing them. Such enhancement of the radio frequency (rf) radiation could cause the equipment to malfunction or to contravene current EMC regulations. In this paper, the electromagnetic resonant effects of heatsinks are exami...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009